Novel lateral data storage: Two-dimensional ferroelectric semiconductor memory
The lateral bottom contact structure may have a wide range of memory applications. Credit: Tokyo Tech
Traditional memory technologies face…
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ferroelectric
A ferroelectric transistor that stores and computes at scale
Researchers at the University of Pennsylvania School of Engineering and Applied Science have introduced a new FE-FET design that demonstrates record-breaking…
Study demonstrates the potential of ferroelectric hafnia for developing low-power logic devices
The negative differential capacitance (NDC) of ultrathin ferroelectric hafnia (HZO) with a thickness of ≤2 nm was validated in MOSCAPs and FET, (a) leading to…
Study demonstrates the non-volatile electrical control of a 2D magnetic insulator using a thin…
Credit: Shanchuan Liang, Jierui Liang, and Cheng Gong
Two-dimensional (2D) magnetic insulators, which are electrically insulating materials…
Nanoscale ferroelectric semiconductor could power AI and post-Moore’s Law computing on a phone
(a) Cross-sectional HAADF-STEM image of the 5 nm thick ScAlN grown on Mo template. (b) and (c) Nano-beam electron diffraction patterns captured from the Mo (b) and…
Review of ferroelectric devices for intelligent computing
Schematics of (a) challenges faced by modern computers using von Neumann architecture and (b) solutions for “heat wall,” “memory wall,” and von Neumann bottleneck based…
Ferroelectric tunnel junction enables superior neuro-inspired computing
Credit: University of Science and Technology of China
Conventional von Neumann computing systems have grown outdated with the rapid…
Ferroelectrics everywhere? New family of ferroelectric materials raises possibilities for improved…
A new family of materials that could result in improved digital information storage and uses less energy may be possible thanks to a team of Penn State researchers who demonstrated ferroelectricity in magnesium-substituted zinc oxide.…
Nitride ferroelectric semiconductors for next-generation electronics
Postdoctoral researchers Ding Wang (left) and Ping Wang (right) check the surface of a single-crystalline ferroelectric ScAlN wafer grown utilizing molecular beam…